
i-FIB
50 times faster than
the most powerful Ga FIB
i-FIB column is the perfect answer for today’s low machining time growing demands. With the patented compact no cooling ECR source technology, i-FIB achieves a sputtering rate up to 50 times higher than the most powerful Ga FIB keeping sharp current distribution. These assets are well adapted for sub-100 nm thickness samples preparation required for high-quality TEM images. Not only has i-FIB the great asset to get rid of gallium primary ions thanks to the use of noble gas ions non-contaminant for microelectronic processes, but also it is able to deliver probe current up to 2 µA making the milling of large structure much more time effective.
Key Features |
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Source |
Compact Plasma Ion Source ( 2.45 GHz HF |
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Ion Species |
Xe+ / Ar+ / N2+ / He+ / O2+ |
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Energy Range |
3 - 30 keV |
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Probe Current |
1 pA – 2 µA |
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Optimal Working Distance |
12 mm |
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Optional UHV Configuration |
Maximum bakeout temperature is 120 °C |




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Ant head slices performed with i-FIB (FOV = 690 µm)
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Cross section of MEMS sample using i-FIB on a TESCAN FERA3 (FOV = 125 µm)
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Nano-pillar prepared with i-FIB on a TESCAN FERA3 (FOV = 274 µm)
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SEM image of very large TEM lamella prepared with Xe i-FIB on TESCAN FERA3 (FOV = 270 µm width)