5-line GIS
All-in-one Gas Injection System
1 |
5 independent gases |
2 |
No inadvertent cross-contamination |
3 |
Conductive or insulating deposition using FIBID or FEBID techniques (Focused Electron/Ion Beam Induced Depositions) |
4 |
Increased FIB etching rate with an expected quality, accuracy and repeatability using chemistry coupled to ion or electron sputtering |
5 |
Controlled injected gas flow by an accurate temperature regulator |
6 |
No possible chemical contact with precursors for user’s safety |
7 |
Needle optimized position for each sample position |
8 |
A Direct Injection Module (DIM) can be mount to inject a large choice of gaseous precursors |
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Chemistry-assisted plasma FIB delayering to control surface planarity realized with TESCAN XEIA3 (i-FIB column + 5-line GIS) / FOV = 15 µm
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5-line GIS nozzle approaching sample surface for testing
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Cross section realized with TESCAN XEIA3 (i-FIB column + 5-line GIS) using water precursor to control surface planarity of integrated circuit (FOV = 5 µm)
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Multi-layer silicon oxide deposition with 5-line GIS coupled with an Orage FIB column (FOV = 40 µm)
