GIS


MonoGIS

Single Gas Injection System

 

1

Ultra-High Vacuum compatible 
for clean environment required in advanced technologies

2

Its compactness
will give you the possibility to mount several systems
on a single chamber and realize 3D nanostructures

3

Conductive or insulating deposition
using FIBID or FEBID techniques (Focused Electron/Ion
Beam Induced Depositions)

4

Increased FIB etching rate
with an expected quality, accuracy and repeatability using
chemistry coupled to ion or electron sputtering

5

Controlled injected gas flow  
by an accurate temperature regulator

6

No possible chemical contact
with precursors for user’s safety

7

A Direct Injection Module (DIM)
can be mount to inject a large choice of gaseous
precursors

 

  • MonoGIS nozzle approaching the sample surface

  • Circuit delayering realized with Tescan XEIA3 (i-FIB + MonoGIS) / FOV = 20 µm

  • Platinum deposition using MonoGIS on TESCAN FERA3 (i-FIB) / FOV = 400 µm

  • SiOx array fabrication with MonoGIS


5-line GIS

All-in-one Gas Injection System

 

1

5 independent gases
possibilities gathered in a single one device

2

No inadvertent cross-contamination
inside the 5 separated injection lines

3

Conductive or insulating deposition
using FIBID or FEBID techniques (Focused Electron/Ion
Beam Induced Depositions)

4

Increased FIB etching rate
with an expected quality, accuracy and repeatability using
chemistry coupled to ion or electron sputtering

5

Controlled injected gas flow  
by an accurate temperature regulator

6

No possible chemical contact
with precursors for user’s safety

7

Needle optimized position  
for each sample position

8

A Direct Injection Module (DIM)
can be mount to inject a large choice of gaseous
precursors

 

  • Chemistry-assisted plasma FIB delayering to control surface planarity realized with TESCAN XEIA3 (i-FIB column + 5-line GIS) / FOV = 15 µm

  • 5-line GIS nozzle approaching sample surface for testing

  • Cross section realized with TESCAN XEIA3 (i-FIB column + 5-line GIS) using water precursor to control surface planarity of integrated circuit (FOV = 5 µm)

  • Multi-layer silicon oxide deposition with 5-line GIS coupled with an Orage FIB column (FOV = 40 µm)


OptiGIS

The easy compact single
Gas Injection System

 

1

High speed temperature ramp-up :
OptiGIS is ready to operate in less
than 2 minutes after reservoir mounting

2

Its ultra-compact design
is an important advantage for massively equipped detectors/
devices to avoid over-crowding

3

Controlled injected gas flow
by an accurate temperature regulator and conductance

reduction diaphragms especially designed for high vapor
pressure precursors

4

Easy reservoir exchange
possible without venting the chamber with a reliable security
system to avoid any contact with chemical precursors

5

No gas remanence
when stopping the injection thanks to an optimized
reservoir positioning

6

Conductive or insulating deposition
using FIBID or FEBID techniques (Focused Electron/Ion
Beam Induced Depositions)
  • Cobra Ga FIB cross-section using Pt deposition for protection in a mobile display

  • Circuit delayering and transistor layer using TESCAN XEIA3 (i-FIB + OptiGIS) / FOV = 4 µm

  • OptiGIS installed on a TESCAN LYRA3 chamber

  • Platinum deposition for TSV (Through-silicon via) cross-section using OptiGIS